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STP10NK60ZFP Arkusz danych(PDF) 5 Page - STMicroelectronics |
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5 / 19 page STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 2 Electrical characteristics 5/19 Table 8. Source drain diode (1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Pulse width limited by safe operating area (3) Limited only by maximum temperature allowed (4) Pulsed: pulse duration = 300µs, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDMNote 2 Source-drain Current Source-drain Current (pulsed) 10 36 A A VSDNote 4 Forward on Voltage ISD=10A, VGS=0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=8A, di/dt = 100A/µs, VDD=40 V, Tj=150°C 570 4.3 15 ns µC A |
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