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BA317 Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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BA317 Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1996 Sep 03 2 Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: 10 V, 30 V, 50 V • Repetitive peak reverse voltage: max. 15 V, 40 V, 60 V • Repetitive peak forward current: max. 225 mA. APPLICATIONS • High-speed switching. DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. Fig.1 Simplified outline (SOD27; DO-35) and symbol. The diodes are type branded. handbook, halfpage MAM246 k a LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − BA316 − 15 V BA317 − 40 V BA318 − 60 V VR continuous reverse voltage BA316 − 10 V BA317 − 30 V BA318 − 50 V IF continuous forward current see Fig.2; note 1 − 100 mA IFRM repetitive peak forward current − 225 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 t=1 µs − 4A t=1ms − 1A t=1s − 0.5 A Ptot total power dissipation Tamb =25 °C; note 1 − 350 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C |
Podobny numer części - BA317 |
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Podobny opis - BA317 |
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