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IRFW820A Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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IRFW820A Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page IRFW/I820A -75 -50 -25 0 25 50 75 100 125 150 175 0.8 0.9 1.0 1.1 1.2 @ Notes : 1. V GS = 0 V 2. I D = 250 µA T J , Junction Temperature [ oC] -75-50-25 0 25 50 75 100125150175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 @ Notes : 1. V GS = 10 V 2. I D = 1.25 A T J , Junction Temperature [ oC] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 DC 100 µs 1 ms 10 ms @ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse Operation in This Area is Limited by R DS(on) V DS , Drain-Source Voltage [V] 25 50 75 100125150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T c , Case Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 single pulse 0.2 0.1 0.01 0.02 0.05 D=0.5 @ Notes : 1. Z θ JC (t)=2.57 o C/W Max. 2. Duty Factor, D=t 1 /t2 3. T JM -TC =PDM *Z θ JC (t) t 1 , Square Wave Pulse Duration [sec] 1&+$11(/ 32:(5 026)(7 Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature Fig 11. Thermal Response Fig 10. Max. Drain Current vs. Case Temperature Fig 9. Max. Safe Operating Area P DM t 1 t 2 |
Podobny numer części - IRFW820A |
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Podobny opis - IRFW820A |
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