KM641003C datasheet(3/8 Pages) SAMSUNG

Numer części	KM641003C

Szczegółowy opis	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating)

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Producent	SAMSUNG [Samsung semiconductor]

Strona internetowa	http://www.samsung.com/Products/Semiconductor

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KM641003C

PRELIMINARY

Revision 1.0

- 3 -

March 1999

CCPCCCRCELIMINARY

Preliminary

CMOS SRAM

PRELIMINARY

ABSOLUTE MAXIMUM RATINGS*

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

Voltage on Any Pin Relative to VSS

VIN, VOUT

-0.5 to Vcc+0.5V

V

Voltage on VCC Supply Relative to VSS

VCC

-0.5 to 7.0

V

Power Dissipation

Pd

1

W

Storage Temperature

TSTG

-65 to 150

°C

Operating Temperature

TA

0 to 70

°C

RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70

°C)

* VIL(Min) = -2.0V a.c (Pulse Width

≤ 8ns) for I ≤ 20mA.

** VIH(Max) = VCC + 2.0V a.c (Pulse Width

≤ 8ns) for I ≤ 20mA.

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

VCC

4.5

5.0

5.5

V

Ground

VSS

0

V

Input High Voltage

VIH

2.2

-

VCC+0.5**

V

Input Low Voltage

VIL

-0.5*

-

0.8

V

CAPACITANCE*(TA=25

°C, f=1.0MHz)

* Capacitance is sampled and not 100% tested.

Item

Symbol

Test Conditions

MIN

Max

Unit

Input/Output Capacitance

CI/O

VI/O=0V

-

8

pF

Input Capacitance

CIN

VIN=0V

-

6

pF

DC AND OPERATING CHARACTERISTICS(TA=0 to 70

°C, Vcc=5.0V±10%, unless otherwise specified)

* VCC=5.0V

±5%, Temp.=25°C.

Parameter

Symbol

Test Conditions

Min

Max

Unit

Input Leakage Current

ILI

VIN=VSS to VCC

-2

2

µA

Output Leakage Current

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

-2

2

µA

Operating Current

ICC

Min. Cycle, 100% Duty

CS=VIL, VIN=VIH or VIL,

IOUT=0mA

12ns

-

70

mA

15ns

-

68

20ns

-

65

Standby Current

ISB

Min. Cycle, CS=VIH

-

30

mA

ISB1

f=0MHz, CS

≥VCC-0.2V,

VIN

≥VCC-0.2V or VIN≤0.2V

-

5

Output Low Voltage Level

VOL

IOL=8mA

-

0.4

V

Output High Voltage Level

VOH

IOH=-4mA

2.4

-

V

VOH1*

IOH1=-0.1mA

-

3.95

V

Podobny numer części - KM641003C

Producent	Numer części	Arkusz danych	Szczegółowy opis
Samsung semiconductor	KM641003A	123Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
	KM641003A-12	123Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
	KM641003A-15	123Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
	KM641003A-20	123Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
	KM641003B	130Kb / 8P	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

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Podobny opis - KM641003C

Producent	Numer części	Arkusz danych	Szczegółowy opis
Samsung semiconductor	K6R1004C1C	101Kb / 9P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
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	K6R1004C1B	128Kb / 8P	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
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