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BU1506 Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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BU1506 Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree C isol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 7.5 V; IC = 0 A 90 - 180 mA BV EBO Emitter-base breakdown voltage I B = 600 mA 7.5 13.5 - V V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 700 - - V L = 25 mH R be Base-emitter resistance V EB = 7.5 V - 55 - Ω V CEsat Collector-emitter saturation voltage I C = 3.0 A; IB = 0.79 A - - 5.0 V V BEsat Base-emitter saturation voltage I C = 3.0 A; IB = 0.79 A - - 1.1 V h FE DC current gain I C = 0.3 A; VCE = 5 V - 12 - h FE I C = 3.0 A; VCE = 5 V 3.8 5.5 7.5 V F Diode forward voltage I F = 3.0 A - 1.6 2.0 V DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C c Collector capacitance I E = 0 A; VCB = 10 V; f = 1 MHz 47 - pF Switching times (line deflection I CM = 3.0 A; LC = 1.35 mH; circuit) C FB = 9.4 nF; IB(end) = 0.67 A; L B = 8 µH; -VBB = 4 V; (-dI B/dt = 0.45 A/µs) t s Turn-off storage time 4.5 6.0 µs t f Turn-off fall time 0.25 0.5 µs 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.300 |
Podobny numer części - BU1506 |
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Podobny opis - BU1506 |
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