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BU1506 Arkusz danych(PDF) 4 Page - NXP Semiconductors |
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BU1506 Arkusz danych(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX Fig.7. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.8. Typical collector-emitter saturation voltage. V CEsat = f (IB); parameter IC Fig.9. Typical turn-off losses. T j = 85˚C Eoff = f (I B); parameter IC Fig.10. Typical collector storage and fall time. ts = f (I B); tf = f (IB); parameter IC; Tj = 85˚C Fig.11. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Ths) 0 1 2 3 4 1.2 1.1 1 0.9 0.8 0.7 0.6 Tj = 25 C Tj = 125 C VBESAT / V IB / A IC = 4A 3A 2.5A 0.1 1 10 10 9 8 7 6 5 4 3 2 1 0 ts, tf / us IB / A ts tf IC = 3A 2.5A 0.1 1 10 10 1 0.1 Tj = 25 C Tj = 125 C VCESAT / V IB / A IC = 2.5A 3A 4A 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 0.1 1 10 1000 100 10 IC = 3A 2.5A Eoff / uJ IB / A September 1997 4 Rev 1.300 |
Podobny numer części - BU1506 |
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Podobny opis - BU1506 |
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