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BU1706AX Arkusz danych(PDF) 5 Page - NXP Semiconductors

Numer części BU1706AX
Szczegółowy opis  Silicon Diffused Power Transistor
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU1706AX Arkusz danych(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AX
Fig.13. Forward bias safe operating area. T
hs = 25 ˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted with heatsink compound and
30
± 5 newton force on the centre of the
envelope.
Fig.14. Typical collector-emitter saturation voltage.
V
CEsat = f(IB); parameter IC
Fig.15. Typical DC current gain.
h
FE = f(IC); parameter VCE
Fig.16. Reverse bias safe operating area. T
j ≤ Tjmax
IC / A
VCE / V
0.01
0.1
1
10
1
10
100
1000
tp =
100 us
1 ms
10 ms
DC
CDC
I
CM
I
tot
P
0.01
1
IC / A
BU1706A
100
10
1
0.1
0.1
10
h FE
1 V
5 V
Tj = 25 C
Tj = 125 C
6
5
4
3
2
1
0
0
400
800
1200
1600
2000
IC / A
BU1706A
VCE / V
0.01
1
IB / A
VCESAT / V
BU1706A
10
1
0.1
0.01
0.1
10
IC = 0.5A
1.5 A
2A
3A
Tj = 25 C
Tj = 125 C
April 1994
5
Rev 1.000


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