Zakładka z wyszukiwarką danych komponentów
Selected language     Polish  ▼
Nazwa części
         Szczegóły


IRF7210PBF Datasheet(Arkusz danych) 2 Page - International Rectifier

Numer części IRF7210PBF
Szczegółowy opis  HEXFET Power MOSFET
Pobierz  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo 

   
 2 page
background image
IRF7210PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-14
–––
–––
V
VGS = 0V, ID = -5.0mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.011 –––
V/°C Reference to 25°C, ID = -1mA
––– .005 .007
VGS = -4.5V, ID = -16A
‚
––– .007 .010
VGS = -2.5V, ID = -12A
‚
VGS(th)
Gate Threshold Voltage
-0.6 –––
–––
V
VDS = VGS, ID = -500µA
gfs
Forward Transconductance
16
–––
–––
S
VDS = -10V, ID = -16A
––– –––
-10
VDS = -12V, VGS = 0V
––– ––– -1.0
VDS = -9.6V, VGS = 0V
––– ––– -100
VDS = -12V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -12V
Gate-to-Source Reverse Leakage
––– –––
100
VGS = 12V
Qg
Total Gate Charge
––– 212 –––
ID = -10A
Qgs
Gate-to-Source Charge
–––
27
–––
nC
VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
52
–––
VGS = -5.0V
‚
td(on)
Turn-On Delay Time
–––
50
–––
ns
VDD = -10V
tr
Rise Time
–––
3.0
–––
ID = -10A
td(off)
Turn-Off Delay Time
–––
6.5
–––
RD = 1.0Ω
tf
Fall Time
–––
30
–––
RG = 6.2Ω
‚
Ciss
Input Capacitance
––– 17179 –––
VGS = 0V
Coss
Output Capacitance
––– 9455 –––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
––– 8986 –––
ƒ = 1.0kHz
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
––– -1.2
V
TJ = 25°C, IS = -2.5A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
165 247
ns
TJ = 25°C, IF = -2.5A
Qrr
Reverse RecoveryCharge
–––
296 444
nC
di/dt = 85A/µs
‚
Source-Drain Ratings and Characteristics
–––
–––
––– –––
-100
-2.5
A
ƒ When mounted on 1 inch square copper board, t<10 sec
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
µs
S
D
G




Html Pages

1  2  3  4  5  6  7 


Datasheet Download



Powiązane numery części

Numer częściSzczegółowy opis komponentówHtml ViewProducent
IRFZ34VPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRLZ4SHEXFET POWER MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFC240HEXFET Power MOSFET Die in Wafer Form 1 International Rectifier
IRF3704ZCSPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFB4321PBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFP150VPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRL1004SPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF3704ZHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF730ASPBFHEXFET Power MOSFET SMPS MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFBE30SPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier

Link URL

Czy Alldatasheet okazała się pomocna?  [ DONATE ]  

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Dodaj do ulubionych   |   Linki   |   Lista producentów
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl