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BU2708AX Arkusz danych(PDF) 1 Page - NXP Semiconductors |
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BU2708AX Arkusz danych(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. Designed to withstand V CES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1700 V V CEO Collector-emitter voltage (open base) - 825 V I C Collector current (DC) - 8 A I CM Collector current peak value - 15 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W V CEsat Collector-emitter saturation voltage I C = 4 A; IB = 1.33 A - 1.0 V I Csat Collector saturation current f = 16 kHz 4 - A t s Storage time I Csat = 4 A; f = 16 kHz 4.8 5.5 µs PINNING - SOT399 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1700 V V CEO Collector-emitter voltage (open base) - 825 V I C Collector current (DC) - 8 A I CM Collector current peak value - 15 A I B Base current (DC) - 4 A I BM Base current peak value - 6 A -I BM Reverse base current peak value 1 -5 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C ESD LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV 1.5 k Ω) case 12 3 b c e 1 Turn-off current. September 1997 1 Rev 1.100 |
Podobny numer części - BU2708AX |
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Podobny opis - BU2708AX |
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