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BU4525AW Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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BU4525AW Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4525AW STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 6.0 V; IC = 0 A - - 100 µA BV EBO Emitter-base breakdown voltage I B = 1 mA 7.5 13.5 - V V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 800 - - V L = 25 mH V CEsat Collector-emitter saturation voltage I C = 9.0 A;IB = 2.25A - - 3.0 V V BEsat Base-emitter saturation voltage I C = 9.0 A;IB = 2.25A 0.96 1.01 1.06 V h FE DC current gain I C = 1.0 A; VCE = 5 V - 12 - h FE I C = 9.0 A; VCE = 5 V 4.2 5.8 7.6 DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C c Collector capacitance I E = 0 A; VCB = 10 V; f = 1 MHz 145 - pF Switching times (16 kHz line I Csat = 9.0 A;IB1 = 1.8 A deflection circuit) (I B2 = -4.5 A) t s Turn-off storage time 3.7 4.5 µs t f Turn-off fall time 0.4 0.55 µs Switching times (70 kHz line I Csat = 7.0 A;IB1 = 1.4 A deflection circuit) (I B2 = -4.5 A) t s Turn-off storage time 2 - µs t f Turn-off fall time 0.15 - µs Fig.1. Test circuit for V CEOsust. Fig.2. Oscilloscope display for V CEOsust. + 50v 100-200R Horizontal Vertical Oscilloscope 1R 6V 30-60 Hz 100R VCE / V min VCEOsust IC / mA 100 200 250 0 2 Measured with half sine-wave voltage (curve tracer). May 1998 2 Rev 1.000 |
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