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BUJ105AB Arkusz danych(PDF) 4 Page - NXP Semiconductors

Numer części BUJ105AB
Szczegółowy opis  Silicon Diffused Power Transistor
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUJ105AB Arkusz danych(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ105AB
Fig.7. Normalised power dissipation.
PD% = 100
⋅PD/PD
25˚C = f (Tmb)
Fig.8. Typical DC current gain. h
FE = f(IC)
parameter V
CE
Fig.9. Typical DC current gain. h
FE = f(IC)
parameter V
CE
Fig.10. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat = f(IB); Tj=25˚C.
Fig.11. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat = f(IC); at IC/IB =4.
Fig.12. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat = f(IC); at IC/IB =4.
0
20
40
60
80
100
120
140
Tmb /
C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
0.01
0.10
1.00
10.00
IB/A
VCEsat/V
IC=1A
2A
3A
4A
0.01
0.05
0.1
0.3
1
2
3
5
10
2
5
10
15
20
30
50
IC/A
HFE
Tj=100C
25C
-40C
VCE=1V
0.1
0.5
1
2
5
10
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
IC/A
VBESAT/V
Tj=100C
-40C
25C
0.01
0.05
0.1
0.3
1
2
3
5
10
2
5
10
15
20
30
50
IC/A
HFE
Tj=100C
25C
-40C
VCE=5V
0.2
0.4
0.6
1
2
5
6
0
0.1
0.2
0.3
0.4
0.5
0.6
IC/A
VCESAT/V
Tj=100C
-40C
25C
October 2001
4
Rev 1.000


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