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IRG4BC10SDPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRG4BC10SDPBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRG4BC10SDPbF 12/23/03 www.irf.com 1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features E G n-channel C VCES = 600V VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A Standard Speed CoPack IGBT • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses TO-220AB Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 14 IC @ TC = 100°C Continuous Collector Current 8.0 ICM Pulsed Collector Current 18 A ILM Clamped Inductive Load Current 18 IF @ TC = 100°C Diode Continuous Forward Current 4.0 IFM Diode Maximum Forward Current 18 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 38 PD @ TC = 100°C Maximum Power Dissipation 15 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m) Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT ––– ––– 3.3 RθJC Junction-to-Case - Diode ––– ––– 7.0 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 80 Wt Weight ––– 2.0(0.07) ––– g (oz) Thermal Resistance Absolute Maximum Ratings W PD -94904 • Lead-Free |
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