2N6284_06 datasheet(6/7 Pages) ONSEMI

Numer części	2N6284

Szczegółowy opis	Darlington Complementary Silicon Power Transistors

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2N6283 2N6284 2N6286 2N6287

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6

+5.0

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.2 0.3

1.0

2.0 3.0

5.0 7.0

20

+4.0

+3.0

+1.0

0

−4.0

−1.0

−2.0

−3.0

−5.0

θVB for VBE

*

θVC for VCE(sat)

−55

°C to + 25°C

25

°C to 150°C

25

°C to + 150°C

0.5

0.7

+5.0

IC, COLLECTOR CURRENT (AMP)

+4.0

+3.0

+1.0

0

−4.0

−1.0

−2.0

−3.0

−5.0

θVB for VBE

*

θVC for VCE(sat)

NPN

2N6284

PNP

2N6287

*APPLIES FOR IC/IB ≤

hFE @VCE + 3.0 V

250

−55

°C to + 25°C

*APPLIES FOR IC/IB ≤

hFE @VCE + 3.0 V

250

−55

°C to + 25°C

25

°C to 150°C

25

°C to + 150°C

−55

°C to + 25°C

10

0.2 0.3

1.0

2.0

3.0

5.0 7.0

20

0.5

0.7

10

+2.0

REVERSE

FORWARD

105

Figure 12. Collector Cut−Off Region

VBE, BASE−EMITTER VOLTAGE (VOLTS)

102

101

100

10−1

−0.2

−0.4

0

+0.2

+0.4

+0.6

VCE = 30 V

TJ = 150°C

100

°C

25

°C

REVERSE

FORWARD

103

104

−0.6 −0.8

−1.0

−1.2 −1.4

103

VBE, BASE−EMITTER VOLTAGE (VOLTS)

100

10−1

10−2

10−3

101

102

+0.2 +0.4

0

−0.2

−0.4

−0.6

+0.6 +0.8

+1.0

+1.2 + 1.4

VCE = 30 V

TJ = 150°C

100

°C

25

°C

Figure 13. Darlington Schematic

NPN

2N6284

PNP

2N6287

BASE

COLLECTOR

EMITTER

[ 8.0 k

[ 60

BASE

COLLECTOR

EMITTER

[ 8.0 k

[ 60

Podobny numer części - 2N6284_06

Producent	Numer części	Arkusz danych	Szczegółowy opis
ON Semiconductor	2N6284	141Kb / 7P	Darlington Complementary Silicon Power Transistors September, 2008 ??Rev. 4
STMicroelectronics	2N6284	527Kb / 8P	Complementary power Darlington transistors

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Podobny opis - 2N6284_06

Producent	Numer części	Arkusz danych	Szczegółowy opis
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