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BUV26_03 Datasheet(Arkusz danych) 2 Page - STMicroelectronics

Numer części BUV26_03
Szczegółowy opis  MEDIUM POWER NPN SILICON TRANSISTOR
Pobierz  4 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
1.76
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 5
0Ω)
VCE = 180V
Tc = 125
oC3
mA
ICEX
Collector Cut-off
Current
(VBE = -1.5V)
VCE = 180V
Tc = 125
oC1
mA
IEBO
Emitter Cut-off
Current (IC = 0)
VEB = 5 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A
L = 25mH
90
V
VEBO
Emitter-Base
Voltage (IC = 0)
IE = 50mA
7
30
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 6A
IB = 0.6A
IC = 12A
IB = 1.2A
0.6
1.5
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC =12A
IB = 1.2A
2
V
ton
ts
tf
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
VCC = 50V
IC =12A
VBE = - 6V
IB1 = 1.2A
RBB = 2.5
0.4
0.45
0.12
0.6
1
0.25
ms
µs
µs
ts
tf
ts
tf
INDUCTIVE LOAD
Storage time
Fall Time
Storage Time
Fall Time
VCC = 50V
IC = 12A
VBE = - 5V
IB1 = 1.2A
LB = - 0.5
µH
VCC = 50V
IC = 12 A
VBE = - 5V
IB1 = 1.2A
LB = - 0.5
µH
Tc = 125
o C
0.5
0.04
2
0.15
µs
µs
µs
µs
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
BUV26
2/4




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