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TPA4411M Arkusz danych(PDF) 2 Page - Texas Instruments |
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TPA4411M Arkusz danych(HTML) 2 Page - Texas Instruments |
2 / 33 page www.ti.com 15 14 13 12 11 5 4 3 2 1 C1P PGND C1N NC PVSS INR SDR INL NC OUTR NC − No internal connection 15 14 13 12 11 5 4 3 2 1 C1P PGND C1N NC PVSS INR SDR INL NC OUTR NC − No internal connection TPA4411MRTJ TPA4411RTJ INR INL PGND OUTL PVSS SVSS C1N PVDD SGND A1 B1 C1 D1 A2 A3 A4 SDL SVDD C1P SDR NC-Nointernalconnection NC NC OUTR TPA4411YZH TPA4411 TPA4411M SLOS430C – AUGUST 2004 – REVISED DECEMBER 2006 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. RTJ (QFN) PACKAGE (TOP VIEW) YZH (WCSP) PACKAGE (TOP VIEW) 2 |
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