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BC548B Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części BC548B
Szczegółowy opis  Amplifier Transistors NPN Silicon
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© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 5
1
Publication Order Number:
BC546/D
BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
BC546
BC547
BC548
VCEO
65
45
30
Vdc
Collector - Base Voltage
BC546
BC547
BC548
VCBO
80
50
30
Vdc
Emitter - Base Voltage
VEBO
6.0
Vdc
Collector Current − Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−92
CASE 29
STYLE 17
3
2
1
http://onsemi.com
MARKING DIAGRAM
COLLECTOR
1
2
BASE
3
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
BC54x
= Device Code
x = 6, 7, or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
BC
54x
AYWW
G
G


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