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MJD112_06 Datasheet(Arkusz danych) 5 Page - ON Semiconductor

Numer części MJD112_06
Szczegółowy opis  Complementary Darlington Power Transistors
Pobierz  8 Pages
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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MJD112 (NPN) MJD117 (PNP)
http://onsemi.com
5
NPN MJD112
PNP MJD117
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0
*APPLIED FOR IC/IB < hFE/3
0.1
0.6
−55
°C TO 25°C
0.4
1
−4.8
24
104
VBE, BASE−EMITTER VOLTAGE (VOLTS)
10−1
0
−0.4
103
102
101
100
+0.2 +0.4
+0.6
TJ = 150°C
100
°C
REVERSE
FORWARD
25
°C
VCE = 30 V
105
−0.6
−0.2
+0.8
+1
+1.2 +1.4
104
VBE, BASE−EMITTER VOLTAGE (VOLTS)
10−1
0
+0.4
103
102
101
100
−0.2
−0.4 −0.6
105
+0.6
+0.2
−0.8
−1
−1.2 −1.4
+0.8
−4
−3.2
−2.4
−1.6
−0.8
qVC FOR VBE
25
°C TO 150°C
25
°C TO 150°C
*
qVC FOR VCE(sat)
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0.1
0.6
0.4
1
2
4
Figure 10. Temperature Coefficients
Figure 11. Collector Cut−Off Region
Figure 12. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈ 8 k
≈ 120
PNP
BASE
EMITTER
COLLECTOR
≈ 8 k
≈ 120
NPN
0
−4.8
+0.8
−4
−3.2
−2.4
−1.6
−0.8
−55
°C TO 25°C
*APPLIES FOR IC/IB < hFE/3
*
qVC FOR VCE(sat)
qVB FOR VBE
25
°C TO 150°C
−55
°C TO 25°C
25
°C TO 150°C
−55
°C TO 25°C
VCE = 30 V
REVERSE
FORWARD
TJ = 150°C
100
°C
25
°C




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