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MJD112_06 Datasheet(Arkusz danych) 2 Page - ON Semiconductor

Numer części MJD112_06
Szczegółowy opis  Complementary Darlington Power Transistors
Pobierz  8 Pages
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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MJD112 (NPN) MJD117 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
100
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
20
mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
20
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
2
mAdc
Collector−Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
10
mAdc
Emitter−Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
2
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
(IC = 4 Adc, VCE = 3 Vdc)
hFE
500
1000
200
12,000
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
VCE(sat)
2
3
Vdc
Base−Emitter Saturation Voltage
(IC = 4 Adc, IB = 40 mAdc)
VBE(sat)
4
Vdc
Base−Emitter On Voltage
(IC = 2 Adc, VCE = 3 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
25
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD117
MJD112
Cob
200
100
pF
2. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
0.04
0.2
4
0.1
0.06
0.6
1
4
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
2
1
0.8
0.6
0.4
0.2
ts
tf
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
V2
APPROX
+8 V
0
≈ 8 k
SCOPE
VCC
−30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25
ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
+ 4 V
tr
td @ VBE(off) = 0 V
PNP
NPN
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V1
APPROX
−12 V
TUT
RB
D1
≈ 60
0.4
2
IB1 = IB2
TJ = 25°C




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