MJD112_06 datasheet(3/8 Pages) ONSEMI

Numer części	MJD112

Szczegółowy opis	Complementary Darlington Power Transistors

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MJD112 (NPN) MJD117 (PNP)

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3

Figure 3. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1

0.01

1000

0.3

0.2

0.07

RqJC(t) = r(t) RqJC

RqJC = 6.25°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.01

0.7

0.5

0.1

0.05

0.03

0.02

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1

2

3

5

10

20

30

50

100

200 300

500

0.2

SINGLE PULSE

D = 0.5

0.05

0.1

0.01

Figure 4. Maximum Rated Forward Biased

Safe Operating Area

Figure 5. Power Derating

2

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.3

100

5

2

0.5

0.2

BONDING WIRE LIMITED

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

520

3

TJ = 150°C

CURVES APPLY BELOW RATED VCEO

100

ms

1ms

dc

0.1

1

3

7

10

730

25

T, TEMPERATURE (

°C)

0

50

75

100

125

15

20

15

10

5

2.5

0

2

1.5

1

0.5

TA TC

TA

SURFACE

MOUNT

TC

0.7

5ms

50

70

200

500

ms

ACTIVE−REGION SAFE−OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided

TJ(pk) < 150_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

VR, REVERSE VOLTAGE (VOLTS)

Cib

0.04

30

1

4

10

40

TC = 25°C

200

10

50

70

100

0.1

2

6

20

PNP

NPN

0.6

0.4

0.2

0.06

Figure 6. Capacitance

Cob

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