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MJE5850 Arkusz danych(PDF) 5 Page - ON Semiconductor

Numer części MJE5850
Szczegółowy opis  8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE5850 Arkusz danych(HTML) 5 Page - ON Semiconductor

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MJE5850, MJE5851, MJE5852
http://onsemi.com
5
1
IN-
PUT
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1 W
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
20
1
0
PW Varied to Attain
IC = 100 mA
2
−10 V
t1
ICM
tf
Clamped
tf
t
t
Vclamp
t2
TIM
E
VCEM
1
2
TUT
RL
VCC
t1 Adjusted to
Obtain IC
Test Equipment
Scope — Tektronix
475 or Equivalent
t1
Lcoil (ICM)
VCC
t2
Lcoil (ICM)
VClamp
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
−V adjusted to obtain desired IB1
+ V adjusted to obtain desired VBE(off)
+ V
50 W
2 W
INPUT
0
0.2 mF
0.0025 mF
0.1 mF
500 W
1/2 W
500 W
0.0033 mF
500 W
1/2 W
+ V
50 mF
0.1 mF
MJE15029
1
2
1 W 2
W
MJE15028
50 mF
− V
+−
1/2 W
1N4934
0.1 mF
−+
500 W
1/2 W
0.2 mF
IB1 adjusted to
obtain the forced
hFE desired
TURN−OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
IB1
1
2
TURN−ON TIME
Lcoil = 80 mH, VCC = 10 V
Rcoil = 0.7 W
Lcoil = 180 mH
Rcoil = 0.05 W
VCC = 20 V
VCC = 250 V
RL = 62 W
Pulse Width = 10
ms
INDUCTIVE TEST CIRCUIT
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
Vclamp = 250 V
RB adjusted to attain desired IB1
VCE
IC
Table 1. Test Conditions for Dynamic Performance
tti
Figure 7. Inductive Switching Measurements
TIME
IB
VCE
90% IB1
tsr
tc
10%
VCEM
Figure 8. Inductive Switching Times
IC = 4 A
IC/IB = 4
TJ = 25°C
tc 100°C
tsv 100°C
tsv 25°C
tc 25°C
VBE, BASE−EMITTER VOLTAGE (VOLTS)
0
0.4
0.2
1.0
0.6
0.8
36
8
05
7
2
14
0
0.9
0.3
2.7
1.5
2.1
1.2
0.6
3.0
1.8
2.4
IC
10%
ICM
2%
ICM
trv
tfi
90%
ICM
ICM
VCEM
Vclamp


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