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MMBD914LT3G Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części MMBD914LT3G
Szczegółowy opis  High?뭆peed Switching Diode
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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MMBD914LT3G Arkusz danych(HTML) 2 Page - ON Semiconductor

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MMBD914LT1
http://onsemi.com
2
Notes: 1. A 2.0 k
W variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V
2.0 k
820 W
0.1 mF
DUT
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
VR, REVERSE VOLTAGE (VOLTS)
10
0
1.0
0.1
0.001
0.01
10
20
30
40
50
1.0
1.2
0.2
0.4
0.6
0.8
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
0
0.68
0.64
0.60
0.52
0.56
2.0
4.0
6.0
8.0
TA = 85°C
TA = −40°C
TA = 25°C
TA = 25°C
TA = 55°C
TA = 85°C
TA = 150°C
TA = 125°C


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