BUK856-800A datasheet(4/7 Pages) PHILIPS

Numer części	BUK856-800A

Szczegółowy opis	Insulated Gate Bipolar Transistor IGBT

Download	7 Pages

Scroll/Zoom	100%

Producent	PHILIPS [NXP Semiconductors]

Strona internetowa	http://www.nxp.com

Logo

4 / 7 page

Philips Semiconductors

Product Specification

Insulated Gate Bipolar Transistor (IGBT)

BUK856-800A

Fig.7. Typical transconductance, T

j = 25 ˚C.

g

fe = f(IC); conditions: VCE = 15 V

Fig.8. Typical turn-on gate-charge characteristics.

V

GE = f(QG); conditions: IC = 12 A; parameter VCE

Fig.9. Typical Switching Times vs. T

j

conditions: I

C = 12 A; VCL = 500 V; RG = 25 Ω

Fig.10. Typical capacitances, C

ies, Coes, Cres.

C = f(V

CE); conditions: VGE = 0 V; f = 1MHz.

Fig.11. Typical turn-off dV

CE/dt vs. RG

conditions: I

C = 12 A; VCL = 500 V; Tj = 125 ˚C

Fig.12. Typical Switching losses vs. T

j

conditions: I

C = 12 A; VCL = 500 V; RG = 25 Ω

0

20

40

IC / A

gfe / S

BUK8Y6-800A

15

10

5

0

10

30

50

0

20

40

VDS / V

C / pF

Cies

Coes

Cres

10

100

1000

10000

10

30

BUK8Y6-800A

0

20

40

60

QG / nC

VGE / V

BUK8Y6-800A

16

14

12

10

8

6

4

2

0

10

30

50

1

100

Rg / Ohm

dVCE/dt (V/ns)

BUK8Y6-800A

15

10

5

0

10

1000

0

20

40

60

80

100

120

140

Tj / C

t / ns

BUK8Y6-800A

600

500

400

300

200

100

0

td(off)

tf

0

20

40

60

80

100

120

140

Tj / C

E / mJ

BUK8Y6-800A

1.5

1

0.5

0

E(on)

E(off)

March 1993

4

Rev 1.000

Podobny numer części - BUK856-800A

Producent	Numer części	Arkusz danych	Szczegółowy opis
NXP Semiconductors	BUK856-800A	60Kb / 7P	Insulated Gate Bipolar Transistor IGBT March 1993 Rev 1.000

More results

Podobny opis - BUK856-800A

Producent	Numer części	Arkusz danych	Szczegółowy opis
NXP Semiconductors	BUK854-800A	60Kb / 7P	Insulated Gate Bipolar Transistor IGBT October 1994 Rev.1.100
ON Semiconductor	NGTB30N60IHLWG	180Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) November, 2012 ??Rev. 0
	NGTG30N60FLWG	174Kb / 9P	Insulated Gate Bipolar Transistor (IGBT) January, 2013 ??Rev. 1
	NGTB30N60FLWG	182Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 0
	NGTB40N60IHLWG	184Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) November, 2012 ??Rev. 0
	NGTB50N60FWG	183Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 1
	NGTG50N60FWG	176Kb / 9P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 0
	NGTB30N60FWG	182Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 1
	NGTB50N60FLWG	187Kb / 10P	Insulated Gate Bipolar Transistor (IGBT) January, 2013 ??Rev. 1
	NGTG30N60FWG	175Kb / 9P	Insulated Gate Bipolar Transistor (IGBT) December, 2012 ??Rev. 0

More results

BUK856-800A Arkusz danych(PDF) 4 Page - NXP Semiconductors

BUK856-800A Arkusz danych(HTML) 4 Page - NXP Semiconductors

Podobny numer części - BUK856-800A

Podobny opis - BUK856-800A

Html Pages

1 2 3 4 5 6 7

Arkusz danych Pobierz

Link URL