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2SC1815L-BL-T92-C-B Arkusz danych(PDF) 3 Page - Unisonic Technologies |
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2SC1815L-BL-T92-C-B Arkusz danych(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R201-006,D TYPICAL CHARACTERISTICS Fig.1 Static characteristics Collector-Emitter Voltage (V) 04 8 12 16 20 0 20 40 60 80 100 Fig.2 DC current Gain IB=300µA IB=250µA IB=200µA IB=150µA IB=100µA IB=50µA Collector Current, IC (mA) VCE=6V 10 0 10 1 102 10 3 10 -1 10 0 10 1 10 2 10 3 Fig.3 Base-Emitter on Voltage Base-Emitter Voltage (V) 00.2 0.4 0.6 0.8 1.0 VCE=6V Collector Current, IC (mA) 10 -1 10 0 10 1 10 2 10 3 10 1 10 2 10 3 104 Fig.4 Saturation Voltage 10 -1 100 10 1 10 2 IC=10*IB VBE(SAT) VCE(SAT) Fig.5 Current Gain-Bandwidth Product Fig.6 Collector Output Capacitance Collector-Base Voltage (V) Collector Current, IC (mA) VCE=6V 10 -1 10 0 10 1 10 2 10 0 101 10 2 10 3 f=1MHz IE=0 100 101 102 103 10-1 10 0 10 1 102 |
Podobny numer części - 2SC1815L-BL-T92-C-B |
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Podobny opis - 2SC1815L-BL-T92-C-B |
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