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STP11NM60 Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STP11NM60 Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, Tc=125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±30V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 34 5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 5.5A 0.4 0.45 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS > ID(on) x RDS(on)max, ID =5.5A 5.2 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 1000 230 25 pF pF pF Coss eq (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS Equivalent output capacitance VGS=0, VDS =0V to 480V 100 pF RG Gate input resistance f=1 MHz gate DC bias = 0 Test signal level = 20mV open drain 1.6 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=480V, ID = 11A VGS =10V (see Figure 15) 30 10 15 nC nC nC |
Podobny numer części - STP11NM60_07 |
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Podobny opis - STP11NM60_07 |
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