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AD8038 Arkusz danych(PDF) 4 Page - Analog Devices

Numer części AD8038
Szczegółowy opis  Low Power 350 MHz Voltage Feedback Amplifiers
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Producent  AD [Analog Devices]
Strona internetowa  http://www.analog.com
Logo AD - Analog Devices

AD8038 Arkusz danych(HTML) 4 Page - Analog Devices

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REV. F
–4–
AD8038/AD8039
ABSOLUTE MAXIMUM RATINGS
*
Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 2
Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .
±4 V
Storage Temperature . . . . . . . . . . . . . . . . . . . . –65
°C to +125°C
Operating Temperature Range . . . . . . . . . . . . . –40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . . . 300
°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8038/AD8039
package is limited by the associated rise in junction temperature
(TJ) on the die. The plastic encapsulating the die will locally reach
the junction temperature. At approximately 150
°C, which is the
glass transition temperature, the plastic will change its properties.
Even temporarily exceeding this temperature limit may change the
stresses that the package exerts on the die, permanently shifting the
parametric performance of the AD8038/AD8039. Exceeding a
junction temperature of 175
°C for an extended period of time can
result in changes in the silicon devices, potentially causing failure.
The still-air thermal properties of the package and PCB ( JA),
ambient temperature (TA), and total power dissipated in the package
(PD) determine the junction temperature of the die. The junction
temperature can be calculated as follows:
TT
P
AD
A
J
=+
×
()
θ
J
The power dissipated in the package (PD) is the sum of the quiescent
power dissipation and the power dissipated in the package due to the
load drive for all outputs. The quiescent power is the voltage between
the supply pins (VS) multiplied by the quiescent current (IS). Assum-
ing the load (RL) is referenced to midsupply, then the total drive power
is VS /2
IOUT, some of which is dissipated in the package and some
in the load (VOUT
IOUT). The difference between the total drive
power and the load power is the drive power dissipated in the package.
PD = quiescent power + (total drive power – load power)
PV
I
V /
V
/R
– V
/R
DS
S
S
OUT
L
OUT
L
[]+ ()×()
[]
[]
2
2
AMBIENT TEMPERATURE – C
0
–55
1.0
–25
5
35
65
95
125
1.5
2.0
SOIC-8
0.5
SOT-23-8
SC70-5
Figure 2. Maximum Power Dissipation vs.
Temperature for a 4-Layer Board
RMS output voltages should be considered. If RL is referenced to VS–,as
in single-supply operation, then the total drive power is VS
IOUT.
If the rms signal levels are indeterminate, consider the worst case,
when VOUT = VS /4 for RL to midsupply:
PV
I
V /4 /R
DS
S
S
2
L
()+ ()
In single-supply operation with RL referenced to VS–, worst case is
VOUT = VS /2.
Airflow will increase heat dissipation, effectively reducing JA. Also,
more metal directly in contact with the package leads from metal
traces, through-holes, ground, and power planes will reduce the JA.
Care must be taken to minimize parasitic capacitances at the input
leads of high speed op amps as discussed in the board layout section.
Figure 2 shows the maximum safe power dissipation in the package
versus the ambient temperature for the SOIC-8 (125
°C/W), SC70-5
(210
°C/W), and SOT-23-8 (160°C/W) package on a JEDEC standard
4-layer board. JA values are approximations.
OUTPUT SHORT CIRCUIT
Shorting the output to ground or drawing excessive current from
the AD8038/AD8039 will likely cause a catastrophic failure.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8038/AD8039 features proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Outline
Branding Information
AD8038AR
–40
°C to +85°C
8-Lead SOIC
R-8
AD8038AR-REEL
–40
°C to +85°C
8-Lead SOIC
R-8
AD8038AR-REEL7
–40
°C to +85°C
8-Lead SOIC
R-8
AD8038AKS-R2
–40
°C to +85°C
5-Lead SC70
KS-5
HUA
AD8038AKS-REEL
–40
°C to +85°C
5-Lead SC70
KS-5
HUA
AD8038AKS-REEL7
–40
°C to +85°C
5-Lead SC70
KS-5
HUA
AD8039AR
–40
°C to +85°C
8-Lead SOIC
R-8
AD8039AR-REEL
–40
°C to +85°C
8-Lead SOIC
R-8
AD8039AR-REEL7
–40
°C to +85°C
8-Lead SOIC
R-8
AD8039ART-R2
–40
°C to +85°C
8-Lead SOT-23
RT-8
HYA
AD8039ART-REEL
–40
°C to +85°C
8-Lead SOT-23
RT-8
HYA
AD8039ART-REEL7
–40
°C to +85°C
8-Lead SOT-23
RT-8
HYA


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