FDD3N40TF datasheet(4/9 Pages) FAIRCHILD

Numer części	FDD3N40TF

Szczegółowy opis	400V N-Channel MOSFET

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Producent	FAIRCHILD [Fairchild Semiconductor]

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FDD3N40 / FDU3N40 Rev. A

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

vs. Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. V

GS = 10 V

2. I

D = 1 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

* Notes :

1. V

GS = 0 V

2. I

D = 250µA

T

J, Junction Temperature [

oC]

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

100 ms

1 ms

10 µs

DC

10 ms

100 µs

Operation in This Area

is Limited by R

DS(on)

* Notes :

1. T

C = 25

oC

2. T

J = 150

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

25

50

75

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

T

C, Case Temperature [

oC]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-1

10

0

* N o te s :

1 . Z

θ JC (t ) = 4 . 2

o

C/W M a x .

2 . D u ty F a c to r , D = t

1 /t 2

3 . T

JM - T C = P DM * Z θ JC (t )

s ingle p u ls e

D= 0 .5

0.02

0.2

0.0 5

0.1

0.01

t

1 , S q uar e

W a v e P u ls e D u r a t ion [ s ec ]

t1

PDM

t2

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