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FQPF8N60CFT Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części FQPF8N60CFT
Szczegółowy opis  600V N-Channel MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQPF8N60CF Rev. A
February 2006
FRFET
TM
FQPF8N60CF
600V N-Channel MOSFET
Features
• 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
TO-220F
FQPF Series
GS
D
Symbol
Parameter
FQPF8N60CFT
Units
VDSS
Drain-Source Voltage
600
V
ID
Drain Current
- Continuous (TC = 25°C)
6.26*
A
- Continuous (TC = 100°C)
3.96*
A
IDM
Drain Current
- Pulsed
(Note 1)
25*
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
160
mJ
IAR
Avalanche Current
(Note 1)
6.26
A
EAR
Repetitive Avalanche Energy
(Note 1)
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
48
W
- Derate above 25°C
0.38
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQPF8N60CF
Units
RθJC
Thermal Resistance, Junction-to-Case
2.6
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
* Drain current limited by maximum junction temperature


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