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FQPF8N60CFT Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FQPF8N60CFT Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQPF8N60CF Rev. A February 2006 FRFET TM FQPF8N60CF 600V N-Channel MOSFET Features • 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 12 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics D G S TO-220F FQPF Series GS D Symbol Parameter FQPF8N60CFT Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 6.26* A - Continuous (TC = 100°C) 3.96* A IDM Drain Current - Pulsed (Note 1) 25* A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ IAR Avalanche Current (Note 1) 6.26 A EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 48 W - Derate above 25°C 0.38 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQPF8N60CF Units RθJC Thermal Resistance, Junction-to-Case 2.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W * Drain current limited by maximum junction temperature |
Podobny numer części - FQPF8N60CFT |
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Podobny opis - FQPF8N60CFT |
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