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IRG4PC50UDPBF Arkusz danych(PDF) 2 Page - International Rectifier |
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IRG4PC50UDPBF Arkusz danych(HTML) 2 Page - International Rectifier |
2 / 10 page IRG4PC50UDPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ---- 180 270 IC = 27A Qge Gate - Emitter Charge (turn-on) ---- 25 38 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ---- 61 90 VGE = 15V td(on) Turn-On Delay Time ---- 46 ---- TJ = 25°C tr Rise Time ---- 25 ---- ns IC = 27A, VCC = 480V td(off) Turn-Off Delay Time ---- 140 230 VGE = 15V, RG = 5.0Ω tf FallTime ---- 74 110 Energy losses include "tail" and Eon Turn-On Switching Loss ---- 0.99 ---- diode reverse recovery. Eoff Turn-Off Switching Loss ---- 0.59 ---- mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss ---- 1.58 1.9 td(on) Turn-On Delay Time ---- 44 ---- TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time ---- 27 ---- ns IC = 27A, VCC = 480V td(off) Turn-Off Delay Time ---- 240 ---- VGE = 15V, RG = 5.0Ω tf FallTime ---- 130 ---- Energy losses include "tail" and Ets Total Switching Loss ---- 2.3 ---- mJ diode reverse recovery. LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package Cies Input Capacitance ---- 4000 ---- VGE = 0V Coes Output Capacitance ---- 250 ---- pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ---- 52 ---- ƒ = 1.0MHz trr Diode Reverse Recovery Time ---- 50 75 ns TJ = 25°C See Fig. ---- 105 160 TJ = 125°C 14 IF = 25A Irr Diode Peak Reverse Recovery Current ---- 4.5 10 A TJ = 25°C See Fig. ---- 8.0 15 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge ---- 112 375 nC TJ = 25°C See Fig. ---- 420 1200 TJ = 125°C 16 di/dt 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 250 ---- A/µs TJ = 25°C During tb ---- 160 ---- TJ = 125°C Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage S 600 ---- ---- V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.65 2.0 IC = 27A VGE = 15V ---- 2.0 ---- V IC = 55A See Fig. 2, 5 ---- 1.6 ---- IC = 27A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance T 16 24 ---- S VCE = 100V, IC = 27A ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V ---- ---- 6500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 25A See Fig. 13 ---- 1.2 1.5 IC = 25A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
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