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XX1003-QC-EV1 Arkusz danych(PDF) 1 Page - Mimix Broadband |
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XX1003-QC-EV1 Arkusz danych(HTML) 1 Page - Mimix Broadband |
1 / 5 page 14.0-17.0/28.0-34.0 GHz Active Doubler QFN, 5x5mm Page 1 of 5 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. January 2007 - Rev 22-Jan-07 X1003-QC Mimix Broadband's 14.0-17.0/28.0-34.0 GHz SMD Active Doubler delivers +21dBm of output power. The device integrates a gain stage, passive doubler and driver amplifier into a single device. The device provides better than +21dBm of saturated output power and has over 20dB of doubled gain with excellent harmonic rejection. The part is designed with a self-biased architecture which requires a single 5V supply. The device comes in a 5x5 mm QFN surface mount package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Millimeter-Wave Point-to-Point, LMDS, SATCOM and VSAT applications. Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Power 35.0 dBc Fundamental Suppression RoHS Compliant 100% On-Wafer RF, DC and Output Power Testing Features General Description Electrical Characteristics (AmbientTemperatureT = 25 oC) Parameter Input Frequency Range (fin) Output Frequency Range (fout) Input Return Loss (S11) Output Return Loss (S22) Fundamental Leakage (fin) Third Harmonic Leakage (3 x fin) RF Input Power (RF Pin) Output Power at +4.0 dBm Pin (Pout) Drain Bias Voltage (Vd) Supply Current (Id) (Vd=5.0V Typical) Units GHz GHz dB dB dBc dBc dBm dBm VDC mA Min. 14.0 28.0 - - - - - - - - Typ. - - TBD TBD -35.0 -30.0 +4.0 +21.0 +5.0 200 Max. 17.0 34.0 - - - - - - +5.5 240 Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 300 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table MTTF Table1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. 1 |
Podobny numer części - XX1003-QC-EV1 |
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Podobny opis - XX1003-QC-EV1 |
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