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ISL12020IBZ Arkusz danych(PDF) 3 Page - Intersil Corporation

Numer części ISL12020IBZ
Szczegółowy opis  Low Power RTC with VDD Battery Backed SRAM and Embedded Temp Compensation 짹5ppm with Auto Day Light Saving
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Producent  INTERSIL [Intersil Corporation]
Strona internetowa  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

ISL12020IBZ Arkusz danych(HTML) 3 Page - Intersil Corporation

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3
FN6450.0
March 29, 2007
Absolute Maximum Ratings
Thermal Information
Voltage on VDD, VBAT, SCL, SDA, and IRQ/FOUT pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6.0V
Voltage on X1 and X2 pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 2.5V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3014) . . . . .>2kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>150V
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
8 Ld SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
DC Operating Characteristics-RTC Test Conditions: VDD = +2.7 to +5.5V, Temperature = -20°C to +70°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
(Note 7)
MAX
UNITS
NOTES
VDD
Main Power Supply
2.7
5.5
V
VBAT
Battery Supply Voltage
1.8
5.5
V
2
IDD1
Supply Current
VDD = 5V
4.1
6.5
µA
3, 5
VDD = 3V
3.5
5.5
µA
3, 5
IDD2
Supply Current (I2C communications
active)
VDD = 5V
300
500
µA
3, 4
IDD3
Supply Current (Temperature
Conversion Active)
VDD = 5V
250
400
µA
3, 4
IBAT
Battery Supply Current
VBAT = 3V @ +25°C
1.0
1.6
µA
3
VBAT = 3V
1.0
2.1
µA
3
IBATLKG
Battery Input Leakage
VDD = 5.5V, VBAT = 1.8V
100
nA
ILI
Input Leakage Current on SCL
100
nA
4
ILO
I/O Leakage Current on SDA
100
nA
4
VBATM
Battery Level Monitor Threshold
-100
+100
mV
VPBM
Brown Out Level Monitor Threshold
-100
+100
mV
VTRIP
VBAT Mode Threshold
2.1
2.2
2.6
V
VTRIPHYS
VTRIP Hysteresis
10
30
50
mV
VBATHYS
VBAT Hysteresis
50
mV
9
Frequency Stability vs Temperature
2.7V
≤ VDD ≤ 3.6V,
±5
ppm
9
Frequency Stability vs Voltage
2.7V
≤ VDD ≤ 3.6V
±3
ppm
9
ATR Sensitivity per LSB
BETA (3:0) = 1000
1
ppm
9
Temperature Sensor Accuracy
VDD = VBAT = 3.3 V
±3
°C
9
IRQ/FOUT
VOL
Output Low Voltage
VDD = 5V, IOL = 3mA
0.4
V
VDD = 2.7V, IOL = 1mA
0.4
V
Power-Down Timing Test Conditions: V
DD = +2.7 to +5.5V, Temperature = -20°C to +70°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
(Note 7)
MAX
UNITS
NOTES
VDD SR-
VDD Negative Slew rate
10
V/ms
8
ISL12020


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