Zakładka z wyszukiwarką danych komponentów |
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FDC602P Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FDC602P Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDC602P Rev C(W) Typical Characteristics 0 1 2 3 4 5 0 3 6 9 12 15 18 Q g , GATE CHARGE (nC) I D = -5.5A V DS =-5.0V -10V -15V 0 400 800 1200 1600 2000 0 5 10 15 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) C ISS C OSS C RSS f = 1 MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100 µs R DS(ON) LIMIT V GS = -4.5V SINGLE PULSE Rθ JA = 156 oC/W T A = 25oC 10ms 1ms 10 20 30 40 50 SINGLE PULSE RθJA TA Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 156 oC/W TJ - T A = P * R θJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
Podobny numer części - FDC602P_01 |
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Podobny opis - FDC602P_01 |
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