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FDC634P Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
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FDC634P Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDC634P Rev E(W) Typical Characteristics 0 3 6 9 12 15 0 1 2 3 4 -V DS , DRAIN TO SOURCE VOLTAGE (V) V GS = -4.5V -3.5V -3.0V -1.5V -2.0V -2.5V V 0.8 1 1.2 1.4 1.6 1.8 2 0 3 6 9 12 15 -I D , DRAIN CURRENT (A) V GS=-2.0V -3.0V -2.5V -3.5V -4.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 T J , JUNCTION TEMPERATURE ( oC) I D = -3.5A V GS = -4.5V 0.02 0.06 0.1 0.14 0.18 0.22 1 2 3 4 5 -V GS , GATE TO SOURCE VOLTAGE (V) I D = -1.8A T A = 125oC T A = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 2 4 6 8 10 0.5 1 1.5 2 2.5 -V GS , GATE TO SOURCE VOLTAGE (V) T A = -55oC 25oC 125oC V DS = -5V 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) V GS = 0V T A = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Podobny numer części - FDC634P |
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Podobny opis - FDC634P |
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