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FDD5690 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDD5690
Szczegółowy opis  60V N-Channel PowerTrench짰 MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD5690 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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FDD5690,Rev.C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 30 V, ID = 30 A
90
mJ
IAR
Maximum Drain-Source Avalanche Current
30
A
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250
µA
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
57
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
1
µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA
22.5
4
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA,Referenced to 25°C
-6
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 9 A
VGS = 10 V, ID = 9 A, TJ = 125
°C
VGS = 6 V, ID = 8 A
0.023
0.032
0.026
0.027
0.048
0.032
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 5 V
25
A
gFS
Forward Transconductance
VDS = 5 V, ID = 9 A
24
S
Dynamic Characteristics
Ciss
Input Capacitance
1110
pF
Coss
Output Capacitance
150
pF
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V
f = 1.0 MHz
75
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
10
18
ns
tr
Turn-On Rise Time
9
18
ns
td(off)
Turn-Off Delay Time
24
39
ns
tf
Turn-Off Fall Time
VDD = 30 V, ID = 1 A
VGS = 10 V, RGEN = 6
10
18
ns
Qg
Total Gate Charge
23
32
nC
Qgs
Gate-Source Charge
4
nC
Qgd
Gate-Drain Charge
VDS = 30 V, ID = 9 A
VGS = 10 V,
6.8
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.3
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 2.3 A
(Note 2)
0.75
1.2
V
Notes:
1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
a) RθJA= 40oC/W when mounted
on a 1in2 pad of 2oz copper.
b) RθJA= 96oC/W on a minimum
mounting pad.


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