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FDD5690 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części FDD5690
Szczegółowy opis  60V N-Channel PowerTrench짰 MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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FDD5690,Rev.C
FDD5690
60V N-Channel PowerTrench® MOSFET
December 2002
2002 Fairchild Semiconductor Corporation
G
S
D
TO-252
S
D
G
Features
• 30 A, 60 V. R
DS(ON) = 0.027Ω @ VGS = 10 V
R
DS(ON) = 0.032 Ω @ VGS = 6 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON).
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Absolute Maximum Ratings
TC=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
ID
Maximum Drain Current
-Continuous
(Note 1)
30
(Note 1a)
9
Maximum Drain Current
-Pulsed
100
A
Maximum Power Dissipation @ TC = 25
oC
(Note 1)
50
TA = 25
oC
(Note 1a)
3.2
PD
TA = 25
oC
(Note 1b)
1.3
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to- Case
(Note 1)
2.5
°C/W
R
θJA
Thermal Resistance, Junction-to- Ambient
(Note 1a)
40
°C/W
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD5690
FDD5690
13’’
16mm
2500


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