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BYY58-900 Arkusz danych(PDF) 2 Page - Zetex Semiconductors |
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BYY58-900 Arkusz danych(HTML) 2 Page - Zetex Semiconductors |
2 / 5 page BYY57 / BYY58 Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter Symbol Unit Test condition BYY57-75 BYY58-75 75 BYY57-100 BYY58-100 100 BYY57-150 BYY58-150 150 BYY57-200 BYY58-200 200 BYY57-300 BYY58-300 300 BYY57-400 BYY58-400 400 BYY57-500 BYY58-500 500 BYY57-600 BYY58-600 600 BYY57-700 BYY58-700 700 BYY57-800 BYY58-800 800 BYY57-900 BYY58-900 900 BYY57-1000 BYY58-1000 1000 BYY57-1100 BYY58-1100 1100 BYY57-1200 BYY58-1200 1200 BYY57-1300 BYY58-1300 1300 BYY57-1400 BYY58-1400 1400 Repetitive peak reverse voltage BYY57-1500 BYY58-1500 VRRM 1500 V Tc = 150°C Forward current, arithmetic value IFAV 35 A 600 half-sine wave, ≤ 10 ms Surge forward current IFSM 500 A TJ = 175°C half-sine wave, ≤ 10 ms 1800 half-sine wave, ≤ 10 ms Maximum rated value ∫i²dt 1250 A²s TJ = 175°C half-sine wave, ≤ 10 ms Repetitive peak forward current IFRM=π*IFAV 110 A f = >15 Hz Effective forward current IFRMS 55 A Junction temperature TJmax 200 °C Storage temperature range Tstg - 50 to + 175 °C Issue 4 – September 2006 2 www.zetex.com © Zetex Semiconductors plc 2006 |
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