PHE13003AU datasheet(4/7 Pages) PHILIPS

Numer części	PHE13003AU

Szczegółowy opis	Silicon Diffused Power Transistor

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

PHE13003AU

Fig.7. Collector-Emitter saturation voltage.

Fig.8. Base-Emitter saturation voltage.

Solid Lines = typ values, I

C/IB = 3

Solid Lines = typ values, I

C/IB = 3

Fig.9. Test circuit inductive load.

Fig.10. Switching times waveforms with inductive load.

V

CC = 300 V; -VBE = 5 V, LC = 200 µH; LB = 1 µH

Fig.11. Test circuit resistive load. V

IM = -6 to +8 V

Fig.12. Switching times waveforms with resistive load.

V

CC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

R

B and RL calculated from ICon and IBon requirements.

0.01

0.1

1

2

0

0.5

1

1.5

2

IC, COLLECTOR CURRENT/A

VCEsat VOLTAGE/V

IC/IB = 3

25 C

-40 C

125 C

0.01

0.1

1

2

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

IC, COLLECTOR CURRENT/A

VBEsat VOLTAGE/V

IC/IB = 3

25 C

125 C

-40 C

LB

IBon

-VBB

LC

T.U.T.

VCC

IC

IB

ICon

IBon

-IBoff

t

ts

tf

toff

10 %

90 %

tp

T

VCC

R

T.U.T.

0

VIM

B

L

IC

IB

10 %

90 %

ton

toff

ts

tf

IBon

-IBoff

ICon

tr

30ns

September 1999

4

Rev 1.000

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