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TYN410 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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TYN410 Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 6 page TYNx10 Series 3/6 Figure 3: Average on-state current versus case temperature Figure 4: Relative variation of thermal impedance versus pulse duration Figure 5: Relative variation of gate trigger current versus junction temperature Figure 6: Surge peak on-state current versus number of cycles Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t Figure 8: On-state characteristics (maximum values) I (A) T(AV) 12 10 8 6 4 2 0 0 10 20 30 40 60 70 90 110 120 50 80 100 130 T (°C) case α = 180° D.C. K=[Z /R th(j-c) th(j-c)] t (s) p Zth(j-c) Zth(j-a) 1 0.1 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 T (°C) j I,I ,I [T ] / GT H L j I ,I ,I [T =25°C] GT H L j IGT IH & IL 2.5 2 1.5 1 0.5 0 -20 -30 -40 0 10 -10 20 40 30 50 60 70 80 90 100 110 I (A) TSM Number of cycles T initial=25°C j t =10ms p One cycle 120 100 80 60 40 20 0 1 10 100 1000 I (A), I t (A s) TSM 22 t (ms) p I t 2 ITSM T initial = 25°C j 10 100 1 2 510 I (A) TM 1000 100 10 1 01 2 3 4 5 V (V) TM V =0.82V R =24m T max.: j t0 d Ω Tj=max T =25°C j |
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