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PZT2907A Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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PZT2907A Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 14 3 Philips Semiconductors Product specification PNP switching transistor PZT2907A THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 106 K/W Rth j-s thermal resistance from junction to soldering point 25 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −50 V −−10 nA IE = 0; VCB = −50 V; Tamb = 150 °C −−10 µA IEBO emitter cut-off current IC = 0; VEB = −5V −−50 nA hFE DC current gain IC = −0.1 mA; VCE = −10 V 75 − IC = −1 mA; VCE = −10 V 100 − IC = −10 mA; VCE = −10 V 100 − IC = −150 mA; VCE = −10 V; note 1 100 300 IC = −500 mA; VCE = −10 V; note 1 50 − VCEsat collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 −−400 mV IC = −500 mA; IB = −50 mA; note 1 −−1.6 V VBEsat base-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 −−1.3 V IC = −500 mA; IB = −50 mA; note 1 −−2.6 V Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz − 8pF Ce emitter capacitance IC =ic = 0; VEB = −2 V; f = 1 MHz − 30 pF fT transition frequency IC = −50 mA; VCE = −20 V; f = 100 MHz; note 1 200 − MHz Switching times (between 10% and 90% levels); (see Fig.2) ton turn-on time ICon = −150 mA; IBon = −15 mA; IBoff =15mA − 40 ns td delay time − 12 ns tr rise time − 30 ns toff turn-off time − 365 ns ts storage time − 300 ns tf fall time − 65 ns |
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