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PZT2907A Arkusz danych(PDF) 3 Page - NXP Semiconductors

Numer części PZT2907A
Szczegółowy opis  PNP switching transistor
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PZT2907A Arkusz danych(HTML) 3 Page - NXP Semiconductors

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1999 Apr 14
3
Philips Semiconductors
Product specification
PNP switching transistor
PZT2907A
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
106
K/W
Rth j-s
thermal resistance from junction to soldering point
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −50 V
−−10
nA
IE = 0; VCB = −50 V; Tamb = 150 °C
−−10
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−50
nA
hFE
DC current gain
IC = −0.1 mA; VCE = −10 V
75
IC = −1 mA; VCE = −10 V
100
IC = −10 mA; VCE = −10 V
100
IC = −150 mA; VCE = −10 V; note 1
100
300
IC = −500 mA; VCE = −10 V; note 1
50
VCEsat
collector-emitter saturation voltage
IC = −150 mA; IB = −15 mA; note 1
−−400
mV
IC = −500 mA; IB = −50 mA; note 1
−−1.6
V
VBEsat
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA; note 1
−−1.3
V
IC = −500 mA; IB = −50 mA; note 1
−−2.6
V
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
8pF
Ce
emitter capacitance
IC =ic = 0; VEB = −2 V; f = 1 MHz
30
pF
fT
transition frequency
IC = −50 mA; VCE = −20 V;
f = 100 MHz; note 1
200
MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
ICon = −150 mA; IBon = −15 mA;
IBoff =15mA
40
ns
td
delay time
12
ns
tr
rise time
30
ns
toff
turn-off time
365
ns
ts
storage time
300
ns
tf
fall time
65
ns


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