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IRGB4045DPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRGB4045DPBF Arkusz danych(HTML) 1 Page - International Rectifier |
1 / 10 page INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4045DPbF 1 www.irf.com 11/28/06 VCES = 600V IC = 6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C VCE(on) typ. = 1.7V TO-220AB C E C G GC E Gate Collector Emitter E G n-channel C PD - 97269 Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100% of the Parts Tested for ILM • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage V IC@ TC = 25°C Continuous Collector Current IC@ TC = 100°C Continuous Collector Current ICM Pulsed Collector Current ILM Clamped Inductive Load Current c A IF@TC=25°C Diode Continuous Forward Current IF@TC=100°C Diode Continuous Forward Current IFM Diode Maximum Forward Current d Continuous Gate-to-Emitter Voltage V Transient Gate-to-Emitter Voltage PD @ TC =25° Maximum Power Dissipation W PD @ TC =100° Maximum Power Dissipation TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT e — — 1.94 RθJC Junction-to-Case - Diode e — — 6.30 RθCS Case-to-Sink, flat, greased surface — 0.5 — RθJA Junction-to-Ambient, typical socket mount e —— 62 -55 to + 175 300 (0.063 in. (1.6mm) from case) ± 20 ± 30 77 39 °C/W VGE 600 12 6.0 20 20 8.0 4.0 20 |
Podobny numer części - IRGB4045DPBF |
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Podobny opis - IRGB4045DPBF |
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