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HAT1065T Datasheet(Arkusz danych) 2 Page - Renesas Technology Corp

Numer części HAT1065T
Szczegółowy opis  Silicon P Channel MOS FET High Speed Power Switching
Pobierz  4 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
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HAT1065T
REJ03G0161-0200 Rev.2.00 Aug 06, 2007
Page 2 of 3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
–200
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±15
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±12 V, VDS = 0
Zero gate voltage drain current
IDSS
–5
µA
VDS = –200 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
–2.0
V
VDS = –10 V, ID = –1 mA
RDS(on)
5.0
6.2
ID = –0.25 A, VGS = –10 V
Note4
RDS(on)
6.0
7.5
ID = –0.25 A, VGS = –4 V
Note4
Static drain to source on state
resistance
RDS(on)
7.0
10.0
ID = –1 A, VGS = –5 V
Note4
Forward transfer admittance
|yfs|
0.29
0.45
S
ID = –0.25 A, VDS = –10 V
Note4
Input capacitance
Ciss
140
pF
Output capacitance
Coss
37
pF
Reverse transfer capacitance
Crss
10
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
12
ns
Rise time
tr
9
ns
Turn-off delay time
td(off)
25
ns
Fall time
tf
15
ns
VGS = –5 V, ID = –0.25 A
VDD
≅ –30 V
Body–drain diode forward voltage
VDF
–0.9
–1.4
V
IF = –0.25 A, VGS = 0
Note4
Notes: 4. Pulse test




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