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Z0107MA Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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Z0107MA Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 12 page Philips Semiconductors Z0103/07/09 series Triacs Product data Rev. 02 — 12 September 2002 2 of 12 9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 3. Ordering information 3.1 Ordering options 4. Limiting values Table 2: Ordering information Part Number Voltage (VDRM) Gate Sensitivity (IGT) Package Z0103MA 600 V 3 mA SOT54B (TO-92) Z0103NA 800 V 3 mA SOT54B (TO-92) Z0107MA 600 V 5 mA SOT54B (TO-92) Z0107NA 800 V 5 mA SOT54B (TO-92) Z0109MA 600 V 10 mA SOT54B (TO-92) Z0109NA 800 V 10 mA SOT54B (TO-92) Z0103MN 600 V 3 mA SOT223 Z0103NN 800 V 3 mA SOT223 Z0107MN 600 V 5 mA SOT223 Z0107NN 800 V 5 mA SOT223 Z0109MN 600 V 10 mA SOT223 Z0109NN 800 V 10 mA SOT223 Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage 25 °C ≤ Tj ≤ 125 °C Z0103/07/09MA; Z0103/07/09MN - 600 V Z0103/07/09NA; Z0103/07/09NN - 800 V VRRM repetitive peak reverse voltage 25 °C ≤ Tj ≤ 125 °C Z0103/07/09MA; Z0103/07/09MN - 600 V Z0103/07/09NA; Z0103/07/09NN - 800 V ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; Figure 2 and Figure 3 t=20ms - 8 A t = 16.7 ms - 8.5 A IT(RMS) RMS on-state current all conduction angles; Figure 4 SOT223 Tsp =90 °C- 1 A SOT54B (TO-92) Tlead =50 °C- 1 A I2tI2t for fusing t = 10 ms - 0.35 A2s dIT/dt rate of rise of on-state current ITM = 1.0 A; IG =2xIGT; dIG/dt = 100 mA/µs - 20 A/ µs IGM peak gate current tp =20 µs - 1.0 A PGM peak gate power - 2.0 W PG(AV) average gate power over any 20 ms period - 0.1 W Tstg storage temperature −40 +150 °C Tj junction temperature −40 +125 °C |
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