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Z0107MA Arkusz danych(PDF) 2 Page - NXP Semiconductors

Numer części Z0107MA
Szczegółowy opis  Triacs
Download  12 Pages
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

Z0107MA Arkusz danych(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Z0103/07/09 series
Triacs
Product data
Rev. 02 — 12 September 2002
2 of 12
9397 750 10102
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.
Ordering information
3.1 Ordering options
4.
Limiting values
Table 2:
Ordering information
Part Number
Voltage (VDRM)
Gate Sensitivity (IGT)
Package
Z0103MA
600 V
3 mA
SOT54B (TO-92)
Z0103NA
800 V
3 mA
SOT54B (TO-92)
Z0107MA
600 V
5 mA
SOT54B (TO-92)
Z0107NA
800 V
5 mA
SOT54B (TO-92)
Z0109MA
600 V
10 mA
SOT54B (TO-92)
Z0109NA
800 V
10 mA
SOT54B (TO-92)
Z0103MN
600 V
3 mA
SOT223
Z0103NN
800 V
3 mA
SOT223
Z0107MN
600 V
5 mA
SOT223
Z0107NN
800 V
5 mA
SOT223
Z0109MN
600 V
10 mA
SOT223
Z0109NN
800 V
10 mA
SOT223
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
25
°C ≤ Tj ≤ 125 °C
Z0103/07/09MA; Z0103/07/09MN
-
600
V
Z0103/07/09NA; Z0103/07/09NN
-
800
V
VRRM
repetitive peak reverse voltage
25
°C ≤ Tj ≤ 125 °C
Z0103/07/09MA; Z0103/07/09MN
-
600
V
Z0103/07/09NA; Z0103/07/09NN
-
800
V
ITSM
non-repetitive peak on-state current
full sine wave; Tj = 25 °C prior to surge;
Figure 2 and Figure 3
t=20ms
-
8
A
t = 16.7 ms
-
8.5
A
IT(RMS)
RMS on-state current
all conduction angles; Figure 4
SOT223
Tsp =90 °C-
1
A
SOT54B (TO-92)
Tlead =50 °C-
1
A
I2tI2t for fusing
t
= 10 ms
-
0.35
A2s
dIT/dt
rate of rise of on-state current
ITM = 1.0 A; IG =2xIGT; dIG/dt = 100 mA/µs
-
20
A/
µs
IGM
peak gate current
tp =20 µs
-
1.0
A
PGM
peak gate power
-
2.0
W
PG(AV)
average gate power
over any 20 ms period
-
0.1
W
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
−40
+125
°C


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