DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3510M04

L TO S BAND LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

Document No. PG10676EJ01V0DS (1st edition)

Date Published July 2007 NS

2007

FEATURES

• Low noise figure and high associated gain

• Flat-lead 4-pin thin-type super minimold (M04) package

APPLICATIONS

• Satellite radio (SDARS, DMB, etc.) antenna LNA

• Low noise amplifier for microwave communication system

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Marking

Supplying Form

1

8

V

)

l

e

e

r

n

o

N

(

s

c

p

0

5

A

-

4

0

M

0

1

5

3

E

N

4

0

M

0

1

5

3

E

N

NE3510M04-T2

NE3510M04-T2-A

Flat-lead 4-pin thin-

type super minimold

(M04) (Pb-Free)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Source), Pin 2 (Drain) face

the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3510M04-A

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

4.0

V

Gate to Source Voltage

3.0

V

I

t

n

e

r

r

u

C

n

i

a

r

D

D

mA

I

t

n

e

r

r

u

C

e

t

a

G

G

140

A

Total Power Dissipation

Note

125

mW

Channel Temperature

+150

C

Storage Temperature

65 to +150

C

Note Mounted on 1.08 cm

2

1.0 mm (t) glass epoxy PCB