NE3510M04-T2-A datasheet(2/11 Pages) CEL

Numer części	NE3510M04-T2-A

Szczegółowy opis	HETERO JUNCTION FIELD EFFECT TRANSISTOR

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Producent	CEL [California Eastern Labs]

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Data Sheet PG10676EJ01V0DS

2

NE3510M04

RECOMMENDED OPERATING CONDITIONS (TA = +25 C)

Parameter

Symbol

MIN.

TYP.

MAX.

Unit

Drain to Source Voltage

VDS

23

V

I

t

n

e

r

u

C

n

i

a

r

D

15

30

mA

P

r

e

w

o

P

t

u

p

n

I

in

0

dBm

ELECTRICAL CHARACTERISTICS (TA = +25 C, unless otherwise specified)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Gate to Source Leak Current

IGSO

VGS = 3V

0.5

10

A

Saturated Drain Current

IDSS

VDS =2V, VGS

A

m

7

9

0

7

2

4

V

0

=

Gate to Source Cutoff Voltage

VGS (off)

VDS =2V, ID =100 A

0.35

0.7

1.10

V

g

e

c

n

a

t

c

u

d

n

o

c

s

n

a

r

T

m

VDS =2V, ID =15mA

70

mS

V

F

N

e

r

u

g

i

F

e

s

i

o

N

DS

=2V, ID = 15 mA, f = 4 GHz

0.45

0.65

dB

G

n

i

a

G

d

e

t

a

i

c

o

s

A

a

6

1

5

.

4

1

dB

Gain 1 dB Compression

PO(1dB)

VDS =2V, ID = 15 mA (Non-RF),

+11

dBm

z

H

G

4

=

f

r

e

w

o

P

t

u

p

t

u

O

Podobny numer części - NE3510M04-T2-A

Producent	Numer części	Arkusz danych	Szczegółowy opis
Renesas Technology Corp	NE3510M04-T2	216Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3510M04-T2B	216Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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Podobny opis - NE3510M04-T2-A

Producent	Numer części	Arkusz danych	Szczegółowy opis
Renesas Technology Corp	NE3210S01	197Kb / 18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1999
Renesas Technology Corp	NE38018	236Kb / 13P	Hetero Junction Field Effect transistor 2003
California Eastern Labs	NE3512S02	270Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
California Eastern Labs	NE3514S02	285Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
Renesas Technology Corp	NE32484A	195Kb / 14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1991
	NE32900	181Kb / 10P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1997
	NE32500	199Kb / 10P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1996
	NE34018	250Kb / 18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2000
California Eastern Labs	NE3515S02-A	415Kb / 9P	HETERO JUNCTION FIELD EFFECT TRANSISTOR
Renesas Technology Corp	NE32984D	207Kb / 14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1995
Renesas Technology Corp	NE350184C	223Kb / 11P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2005

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NE3510M04-T2-A Arkusz danych(PDF) 2 Page - California Eastern Labs

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