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LA5683T Arkusz danych(PDF) 11 Page - Sanyo Semicon Device |
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LA5683T Arkusz danych(HTML) 11 Page - Sanyo Semicon Device |
11 / 12 page LA5683T No.8214-11/12 Sample Circuit That Makes Use of VBIAS (2) This IC can be used to implement the circuit that is shown below since the power to the channels 3 and 4 output stages is supplied via VBIAS. Apply the power voltage to VBIAS through the path that is made up of VCC, L to Schottky diode (through path formation). Then feed the stabilized voltage VO3 that is raised to 3.3V in channel 3 to VBIAS. A voltage of approx. VBIAS3-1 volt develops at VOUT3, so that the IC can drive MOS transistors in a low-voltage environment like this sample circuit. Using the IC in a Step-down Circuit (CH1 and CH2) The IC detects a short-circuit condition and activates the SCP when VCC falls below the preset voltage VO+VF in such a step-down application as the one shown below. to IN3− VO3=3.3V VCC VBIAS Circuit Example 2 VBIAS OUT3 SW VOUT3 MCH3409 L Schottky barrier diode Fed to VBIAS When stepping down VCC<V0+VF VCC VO1 VO1 IN+ OUT VCC VCC VF VF (diode forward voltage) 1.8V SCP activated |
Podobny numer części - LA5683T |
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Podobny opis - LA5683T |
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