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BDW53D Arkusz danych(PDF) 2 Page - Power Innovations Ltd |
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BDW53D Arkusz danych(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS 2 AUGUST 1978 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA IB = 0 (see Note 5) BDW53 BDW53A BDW53B BDW53C BDW53D 45 60 80 100 120 V ICEO Collector-emitter cut-off current VCE = 30 V VCE = 30 V VCE = 40 V VCE = 50 V VCE = 60 V IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 BDW53 BDW53A BDW53B BDW53C BDW53D 0.5 0.5 0.5 0.5 0.5 mA ICBO Collector cut-off current VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V VCB = 120 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V VCB = 120 V IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW53 BDW53A BDW53B BDW53C BDW53D BDW53 BDW53A BDW53B BDW53C BDW53D 0.2 0.2 0.2 0.2 0.2 5 5 5 5 5 mA IEBO Emitter cut-off current VEB = 5 V IC = 0 2 mA hFE Forward current transfer ratio VCE = 3 V VCE = 3 V IC = 1.5 A IC = 4 A (see Notes 5 and 6) 750 100 20000 VBE(on) Base-emitter voltage VCE = 3 V IC = 1.5 A (see Notes 5 and 6) 2.5 V VCE(sat) Collector-emitter saturation voltage IB = 30 mA IB = 40 mA IC = 1.5 A IC = 4 A (see Notes 5 and 6) 2.5 4 V VEC Parallel diode forward voltage IE = 4 A IB = 0 3.5 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 3.125 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = 2 A VBE(off) = -5 V IB(on) = 8 mA RL = 15 Ω IB(off) = -8 mA tp = 20 µs, dc ≤ 2% 1 µs toff Turn-off time 4.5 µs |
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Podobny opis - BDW53D |
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