BUZ110S datasheet(6/8 Pages) INFINEON

Numer części	BUZ110S

Szczegółowy opis	SIPMOS짰 Power Transistor

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Producent	INFINEON [Infineon Technologies AG]

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BUZ 110S

Data Book

6

05.99

Typ. output characteristics

ID = f (VDS)

parameter:

tp = 80 µs

0.0

0.5 1.0

1.5 2.0

2.5 3.0

3.5 4.0

V

5.0

VDS

0

20

40

60

80

100

120

140

160

A

190

BUZ110S

V

GS

[V]

a

a4.0

b

b4.5

c

c5.0

d

d5.5

e

e6.0

f

f6.5

g

g7.0

h

h7.5

i

i8.0

j

j9.0

k

10.0

l

Ptot = 200W

l

20.0

Typ. drain-source-on-resistance

RDS(on) = f (ID)

parameter:

VGS

0

20

40

60

80

100

120

140 A

170

ID

0.000

0.004

0.008

0.012

0.016

0.020

0.024

Ω

0.032

BUZ110S

VGS [V] =

c

5.0

d

5.5

e

6.0

f

6.5

g

7.0

h

7.5

i

8.0

j

9.0

k

10.0

l

20.0

Typ. transfer characteristics

ID= f (VGS)

parameter:

tp = 80 µs

VDS ≥ 2 x ID x RDS(on) max

2.5

3.0

3.5

4.0

4.5

5.0

V

6.0

VGS

0

10

20

30

40

50

60

A

80

Typ. forward transconductance

gfs = f(ID); Tj = 25˚C

parameter:

gfs

0

10

20

30

40

50

A

65

ID

0

5

10

15

20

25

30

35

40

45

S

55

Podobny numer części - BUZ110S

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