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BUZ110SE3045 Arkusz danych(PDF) 2 Page - Infineon Technologies AG |
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BUZ110SE3045 Arkusz danych(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page BUZ 110S Data Book 2 05.99 Thermal Characteristics Parameter Values Symbol Unit typ. max. min. Characteristics RthJC - - 0.75 K/W Thermal resistance, junction - case - Thermal resistance, junction - ambient, leded RthJA - 62 - - - - 62 40 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) RthJA Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Unit Values min. max. typ. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA - V(BR)DSS 55 - V Gate threshold voltage, VGS = VDS ID = 200 µA VGS(th) 4 3 2.1 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 150 ˚C - - IDSS µA 1 100 0.1 - Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 nA 100 Drain-Source on-state resistance VGS = 10 V, ID = 66 A RDS(on) - 0.009 0.01 Ω 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. |
Podobny numer części - BUZ110SE3045 |
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Podobny opis - BUZ110SE3045 |
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