KSD-T5C039-001

3

N-CH Electrical Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

20

-

-

V

Gate threshold voltage

0.6

-

1.2

V

Drain-source cut-off current

-

-

1

μA

Gate leakage current

-

-

±10

μA

-

19

40

mΩ

Drain-source on-resistance

-

27

45

mΩ

Forward transfer conductance

④

-

22

-

S

Input capacitance

Ciss

-

390

590

Output capacitance

Coss

-

90

135

Reverse transfer capacitance

Crss

f=1MHz

-

40

60

pF

Turn-on delay time

-

2.0

-

Rise time

-

1.9

-

Turn-off delay time

-

2.8

-

Fall time

③④

-

1.9

-

ns

Total gate charge

-

4.0

6.0

Gate-source charge

-

1.0

1.5

Gate-drain charge

③④

-

1.6

2.4

nC

Source-Drain Diode Ratings and Characteristics

(Ta=25

°C)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Source current

-

-

0.5

Sourcecurrent(Plused)

①

Integral reverse diode

in the MOSFET

-

-

2.0

A

Forward voltage

④

-

0.7

1.2

V

Reverse recovery time

-

57

-

ns

Reverse recovery charge

-

240

-

uC

Note ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② L=2.0mH, I

③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%

④ Essentially independent of operating temperature

STK004SF