Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

BC549 Arkusz danych(PDF) 1 Page - Diotec Semiconductor

Numer części BC549
Szczegółowy opis  General Purpose Si-Epitaxial Planar Transistors
Download  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  DIOTEC [Diotec Semiconductor]
Strona internetowa  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC549 Arkusz danych(HTML) 1 Page - Diotec Semiconductor

  BC549 Datasheet HTML 1Page - Diotec Semiconductor BC549 Datasheet HTML 2Page - Diotec Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 2 page
background image
BC546 ... BC549
BC546 ... BC549
NPN
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
Version 2006-05-31
Dimensions - Maße [mm]
Power dissipation – Verlustleistung
500 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC546
BC547
BC548/549
Collector-Emitter-voltage
E-B short
VCES
85 V
50 V
30 V
Collector-Emitter-voltage
B open
VCEO
65 V
45 V
30 V
Collector-Base-voltage
E open
VCBO
80 V
50 V
30 V
Emitter-Base-voltage
C open
VEB0
5 V
Power dissipation – Verlustleistung
Ptot
500 mW 1)
Collector current – Kollektorstrom (dc)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
- IEM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 µA
hFE
typ. 90
typ. 150
typ. 270
VCE = 5 V, IC = 2 mA
hFE
110 ... 220
200 ... 450
420 ... 800
VCE = 5 V, IC = 100 mA
hFE
typ. 120
typ. 200
typ. 400
h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
hie
1.6 ... 4.5 kΩ
3.2 ...8.5 kΩ
6 ... 15 kΩ
Output admittance – Ausgangs-Leitwert
hoe
18 < 30 µS
30 < 60 µS
60 < 110 µS
Reverser voltage transfer ratio
Spannungsrückwirkung
hre
typ. 1.5*10-4
typ. 2*10-4
typ. 3*10-4
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
2 x 2.54
C BE


Podobny numer części - BC549

ProducentNumer częściArkusz danychSzczegółowy opis
logo
NXP Semiconductors
BC549 PHILIPS-BC549 Datasheet
44Kb / 8P
   NPN general purpose transistors
1999 Apr 22
BC549 NXP-BC549 Datasheet
248Kb / 7P
   NPN general purpose transistors
2004 Oct 11
logo
ARTSCHIP ELECTRONICS CO...
BC549 ARTSCHIP-BC549 Datasheet
179Kb / 3P
   NPN Epitaxial Silicon Transistor
logo
Semtech Corporation
BC549 SEMTECH-BC549 Datasheet
371Kb / 5P
   NPN Silicon Epitaxial Planar Transistor
logo
KEC(Korea Electronics)
BC549 KEC-BC549 Datasheet
34Kb / 1P
   EPITAXIAL PLANAR NPN TRANSISTOR
More results

Podobny opis - BC549

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Diotec Semiconductor
2N4403 DIOTEC-2N4403 Datasheet
104Kb / 2P
   General Purpose Si-Epitaxial Planar Transistors
2N4401 DIOTEC-2N4401 Datasheet
102Kb / 2P
   General Purpose Si-Epitaxial Planar Transistors
BC337-XBK DIOTEC-BC337-XBK Datasheet
95Kb / 2P
   General Purpose Si-Epitaxial Planar Transistors
BC546XBK DIOTEC-BC546XBK Datasheet
87Kb / 2P
   General Purpose Si-Epitaxial Planar Transistors
2N5400 DIOTEC-2N5400 Datasheet
106Kb / 2P
   General Purpose Si-Epitaxial Planar Transistors
2N5550 DIOTEC-2N5550 Datasheet
106Kb / 2P
   General Purpose Si-Epitaxial Planar Transistors
BC327-XBK DIOTEC-BC327-XBK Datasheet
95Kb / 2P
   General Purpose Si-Epitaxial Planar Transistors
2N5172 DIOTEC-2N5172 Datasheet
105Kb / 2P
   General Purpose Si-Epitaxial Planar Transistors
BC327 DIOTEC-BC327_07 Datasheet
106Kb / 2P
   General Purpose Si-Epitaxial Planar Transistors
BC337 DIOTEC-BC337_07 Datasheet
105Kb / 2P
   General Purpose Si-Epitaxial Planar Transistors
More results


Html Pages

1 2


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com