IRLU8743PBF datasheet(1/11 Pages) IRF

Numer części	IRLU8743PBF

Szczegółowy opis	HEXFET짰Power MOSFET

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08/15/07

IRLR8743PbF

IRLU8743PbF

HEXFET® Power MOSFET

Notes

through are on page 11

Applications

Benefits

l Very Low RDS(on) at 4.5V VGS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l Lead-Free

PD - 96123

VDSS RDS(on) max

Qg

30V

3.1m

:

39nC

Absolute Maximum Ratings

Parameter

Units

VDS

Drain-to-Source Voltage

V

VGS

Gate-to-Source Voltage

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

A

IDM

Pulsed Drain Current

PD @TC = 25°C

Maximum Power Dissipation

g

W

PD @TC = 100°C Maximum Power Dissipation g

Linear Derating Factor

W/°C

TJ

Operating Junction and

°C

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.11

RθJA

Junction-to-Ambient (PCB Mount)

gÃ

–––

50

°C/W

RθJA

Junction-to-Ambient

–––

110

135

Max.

160

f

113

f

640

± 20

30

0.90

68

300 (1.6mm from case)

-55 to + 175

D-Pak

IRLR8743PbF

I-Pak

IRLU8743PbF

G

S

D

G

D

S

GD

S

Gate

Drain

Source

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